Ting-Li Yang

Title: Innovations of Ting-Li Yang in Semiconductor Technology

Introduction

Ting-Li Yang is a notable inventor based in Tainan City, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent. His work is recognized for its impact on the efficiency and functionality of semiconductor devices.

Latest Patents

Ting-Li Yang holds a patent titled "Bump integration with redistribution layer." This patent describes a method of forming a semiconductor device that includes several intricate steps. The process involves forming an interconnect structure over a substrate, followed by the creation of a first passivation layer over the interconnect structure. A first conductive feature is then formed over the first passivation layer, which is electrically coupled to the interconnect structure. The method continues with the conformal formation of a second passivation layer over the first conductive feature and the first passivation layer. A dielectric layer is then formed over the second passivation layer, culminating in the creation of a first bump via and a first conductive bump that is electrically coupled to the first conductive feature.

Career Highlights

Ting-Li Yang is associated with Taiwan Semiconductor Manufacturing Co., Ltd., a leading company in the semiconductor industry. His work at this prestigious organization has allowed him to contribute to cutting-edge technologies and advancements in semiconductor manufacturing.

Collaborations

Ting-Li Yang collaborates with Ching-Wen Hsiao, a talented woman in the field. Their partnership exemplifies the importance of teamwork in driving innovation and achieving breakthroughs in technology.

Conclusion

Ting-Li Yang's contributions to semiconductor technology through his patent demonstrate his expertise and commitment to innovation. His work continues to influence the industry and pave the way for future advancements in semiconductor devices.