Ting-Jyun He

Title: Ting-Jyun He: Innovator in DRAM Technology

Introduction

Ting-Jyun He is a notable inventor based in Taipei County, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in dynamic random-access memory (DRAM) systems. His innovative work has led to the development of advanced memory cell structures that enhance performance and efficiency.

Latest Patents

Ting-Jyun He holds a patent for a "Vertical capacitor-less DRAM cell, DRAM array and operation of the same." This invention describes a vertical capacitor-less DRAM cell that includes a source layer with a first conductivity type, a storage layer with a second conductivity type, an active layer, a drain layer, an address gate, and a storage gate. The design allows for efficient writing to the DRAM cell by utilizing a MOSFET configuration that injects carriers into the storage layer from the active layer.

Career Highlights

He is currently employed at Powerchip Technology Corporation, where he continues to work on innovative memory solutions. His expertise in semiconductor technology has positioned him as a key player in the development of next-generation memory devices.

Collaborations

Ting-Jyun He has collaborated with notable colleagues, including Hui-Huang Chen and Chih-Yuan Chen, to advance research and development in the field of DRAM technology.

Conclusion

Ting-Jyun He is a prominent inventor whose work in vertical capacitor-less DRAM technology has the potential to revolutionize memory systems. His contributions to Powerchip Technology Corporation and collaborations with fellow researchers highlight his commitment to innovation in the semiconductor industry.