This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Ting-Huan Hsieh: Innovator in Semiconductor Device Structures
Introduction
Ting-Huan Hsieh is an inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology. His work focuses on developing innovative structures and methods for semiconductor devices.
Latest Patent Applications
Ting-Huan Hsieh has filed a patent application titled "SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME." This application outlines a semiconductor device structure that includes a source/drain region over a substrate, a first interlayer dielectric layer surrounding a portion of the source/drain region, and a second interlayer dielectric layer distinct from the first. Additionally, it features a silicide layer on the source/drain region and a conductive contact within the second interlayer dielectric layer.
Conclusion
Ting-Huan Hsieh's work in semiconductor device structures showcases his innovative approach to technology. His contributions are poised to impact the semiconductor industry significantly.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile