Ting-Hsuan Kang

Title: Innovations of Ting-Hsuan Kang

Introduction

Ting-Hsuan Kang is a notable inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced fabrication methods. With a total of 2 patents, his work has garnered attention in the industry.

Latest Patents

One of Ting-Hsuan Kang's latest patents is a method for fabricating a fin structure with tensile stress. This innovative approach involves providing a structure divided into an N-type transistor region and a P-type transistor region. The process includes forming two first trenches and two second trenches in the substrate, where the first trenches define a fin structure and the second trenches segment the first trenches and the fin. A flowable chemical vapor deposition is then performed to create a silicon oxide layer that fills the trenches. A patterned mask is formed within the N-type transistor region, covering the silicon oxide layer in the second trenches. Subsequently, part of the silicon oxide layer is removed to ensure that the exposed silicon oxide layer is lower than the top surface of the fin structure. Finally, the patterned mask is removed, completing the fabrication process.

Career Highlights

Ting-Hsuan Kang is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to further develop his expertise and contribute to cutting-edge technologies.

Collaborations

Ting-Hsuan Kang has collaborated with several talented individuals, including his coworkers Kai-Lin Lee and Zhi-Cheng Lee. Their combined efforts have led to advancements in semiconductor fabrication techniques.

Conclusion

Ting-Hsuan Kang's innovative work in semiconductor technology, particularly in the fabrication of fin structures, showcases his expertise and dedication to advancing the field. His contributions are significant and continue to influence the industry.