Sacramento, CA, United States of America

Timothy C Johnston

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Intel Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Timothy C Johnston. Retrieved from https://idiyas.com/inventor/timothy-c-johnston

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Timothy C. Johnston and Optical Proximity Correction for Integrated Circuits.

Introduction

Timothy C. Johnston is an inventor based in Sacramento, California, and works at Intel Corporation. His patent work addresses optical proximity correction, a process used to improve the accuracy of patterns transferred from photomasks onto integrated circuits.

Latest Patents

Johnston is associated with 1 patent: “Enhanced mask pattern-aware heuristics for optical proximity corrections for integrated circuits.” The disclosure describes methods for predicting contours of adjacent photomask polygons while accounting for corner rounding. It uses those predictions to determine the minimum distance between contours, supporting optical proximity corrections for integrated-circuit patterns.

Career Highlights

Johnston’s listed invention concerns the challenges of accurately modeling photomask features during integrated-circuit manufacturing. His work at Intel Corporation connects this technical contribution with the company’s semiconductor research and development.

Collaborations

Johnston’s listed coworkers include Seongtae Jeong and Talha Khan. Their names are associated with the collaborative context of his patent work.

Conclusion

Timothy C. Johnston’s patent focuses on improving photomask contour prediction and distance estimation for optical proximity correction, contributing to the precision required in integrated-circuit patterning.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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