Location History:
- Auckland, NZ (2009 - 2011)
- Auckland, NE (2014)
Company Filing History:
Years Active: 2009-2014
Title: Tim Wisleder: Innovator in Semiconductor Technology
Introduction
Tim Wisleder is a notable inventor based in Auckland, New Zealand. He has made significant contributions to the field of semiconductor technology, particularly in the development of high electron mobility transistors (HEMTs). With a total of three patents to his name, Wisleder continues to push the boundaries of innovation in this critical area of electronics.
Latest Patents
Wisleder's latest patents focus on robust transistors with fluorine treatment. These patents describe a semiconductor device, specifically a high electron mobility transistor (HEMT), that features multiple epitaxial layers and operates under an electric field (E field). A key aspect of his invention is the introduction of a negative ion region within the epitaxial layers, which serves to counteract the operating electric field. The method for fabricating this semiconductor device involves providing a substrate and growing epitaxial layers on it. Negative ions are introduced into these layers to form the negative ion region, effectively mitigating the effects of the electric fields in the device. Contacts can be deposited on the epitaxial layers either before or after the formation of the negative ion region.
Career Highlights
Tim Wisleder is currently employed at Cree GmbH, a company known for its advancements in semiconductor technology. His work has been instrumental in enhancing the performance and reliability of semiconductor devices, making significant strides in the industry.
Collaborations
Wisleder collaborates with talented individuals such as Yifeng Wu and Marcia Moore. Their combined expertise contributes to the innovative projects at Cree GmbH, fostering a collaborative environment that drives technological advancements.
Conclusion
Tim Wisleder stands out as a prominent inventor in the semiconductor field, with his innovative patents and contributions to high electron mobility transistors. His work at Cree GmbH and collaborations with skilled colleagues further enhance his impact on the industry.