Company Filing History:
3 out of 2,932 
1 out of 832,912 Years Active: 2001-2006
Title: Tim Anderson: Innovator in Semiconductor Technology
Introduction
Tim Anderson is a notable inventor based in Gainesville, FL (US), recognized for his contributions to semiconductor technology. With a total of four patents to his name, Anderson has made significant strides in the field of group III-nitride materials.
Latest Patents
Anderson's latest patents include innovative methods for forming group III-N articles. One of his patents, titled "GaN growth on Si using ZnO buffer layer," outlines a method that involves providing a single crystal silicon substrate, depositing a zinc oxide (ZnO) layer on the substrate, and subsequently depositing a single crystal group III-N layer on the ZnO layer. Notably, at least a portion of the group III-N layer is deposited at a temperature of less than 600° C. Another significant patent is "Group III-nitride on Si using epitaxial BP buffer layer," which describes a semiconductor device and method for forming the same. This patent includes a silicon (111) single crystal substrate and an epitaxial boron phosphide (BP) layer disposed on the substrate, with a group III-nitride semiconductor epitaxial layer placed on the BP epitaxial layer.
Career Highlights
Throughout his career, Tim Anderson has worked with the University of Florida Research Foundation, Incorporated, contributing to various research initiatives and projects. His work has been instrumental in advancing the understanding and application of semiconductor materials.
Collaborations
Anderson has collaborated with notable colleagues, including Olga Kryliouk and Kee Chan Kim, enhancing the research and development efforts in his field.
Conclusion
Tim Anderson's innovative work in semiconductor technology and his contributions through multiple patents highlight his role as a significant figure in the industry. His advancements continue to influence the development of new materials and methods in semiconductor applications.