The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2006
Filed:
Oct. 22, 2003
Applicants:
Olga Kryliouk, Gainesville, FL (US);
Tim Anderson, Gainesville, FL (US);
Kee Chan Kim, Gainesville, FL (US);
Inventors:
Olga Kryliouk, Gainesville, FL (US);
Tim Anderson, Gainesville, FL (US);
Kee Chan Kim, Gainesville, FL (US);
Assignee:
University of Florida, Gainesville, FL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming group III-N articles includes the steps of providing a single crystal silicon substrate, depositing a zinc oxide (ZnO) layer on the substrate, and depositing a single crystal group III-N layer on the ZnO layer. At least a portion of the group III-N layer is deposited at a temperature of less than 600° C.
Kryliouk, Olga. (2006). Gan growth on si using zno buffer layer (U.S. Patent No. 7001791). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7001791
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile