University of Florida Research Foundation Inc

Other

Tim Anderson

Olga Kryliouk

Kee Chan Kim

Bruce Chai

Omar J Bchir

A method for forming group III-N articles includes the steps of providing a single crystal silicon substrate, depositing a zinc oxide (ZnO) layer on the substrate, and depositing a single crystal group III-N layer on the ZnO layer. At least a portion of the group III-N layer is deposited at a temperature of less than 600&#xb0; C.

GaN growth on Si using ZnO buffer layer

A semiconductor device and method for forming the same includes a silicon (111) single crystal substrate, and an epitaxial boron phosphide (BP) layer disposed on the substrate. A group III-nitride semiconductor epitaxial layer is disposed on the BP epitaxial layer.

Group III-nitride on Si using epitaxial BP buffer layer

The subject invention pertains to a method and device for producing large area single crystalline III-V nitride compound semiconductor substrates with a composition Al In Ga N (where 0&lE;x&lE;1, 0&lE;y&lE;1, and 0&lE;x&plus;y&lE;1). In a specific embodiment, GaN substrates, with low dislocation densities (&tilde;10 cm ) can be produced. These crystalline III-V substrates can be used to fabricate lasers and transistors. Large area free standing single crystals of III-V compounds, for example GaN, can be produced in accordance with the subject invention. By utilizing the rapid growth rates afforded by hydride vapor phase epitaxy (HVPE) and growing on lattice matching orthorhombic structure oxide substrates, good quality III-V crystals can be grown. Examples of oxide substrates include LiGaO , LiAlO , MgAlScO , Al MgO , and LiNdO . The subject invention relates to a method and apparatus, for the deposition of III-V compounds, which can alternate between MOVPE and HVPE, combining the advantages of both. In particular, the subject hybrid reactor can go back and forth between MOVPE and HVPE in situ so that the substrate does not have to be transported between reactor apparatus and, therefore, cooled between the performance of different growth techniques.

Method and apparatus for producing group-III nitrides

The subject invention pertains to a method and device for producing large area single crystalline III-V nitride compound semiconductor substrates with a composition Al,In,Ga,N (where O&lE;x&lE;1, 0&lE;y&lE;1, and 0&lE;x&plus;y&lE;1). In a specific embodiment, GaN substrates, with low dislocation densities (&tilde;10,cm,) can be produced. These crystalline III-V substrates can be used to fabricate lasers and transistors. Large area free standing single crystals of III-V compounds, for example GaN, can be produced in accordance with the subject invention. By utilizing the rapid growth rates afforded by hydride vapor phase epitaxy (HVPE) and growing on lattice matching orthorhombic structure oxide substrates, good quality III-V crystals can be grown. Examples of oxide substrates include LiGaO,, LiAlO,, MgAlScO,, Al,MgO,, and LiNdO,. The subject invention relates to a method and apparatus, for the deposition of III-V compounds, which can alternate between MOVPE and HVPE, combining the advantages of both. In particular, the subject hybrid reactor can go back and forth between MOVPE and HVPE in situ so that the substrate does not have to be transported between reactor apparatus and, therefore, cooled between the performance of different growth techniques.

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Gainesville, FL, United States of America

Tim Anderson