This inventor holds 1 USPTO granted patent. Top assignee: Varian Associates, Inc.. Active years: 1998.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1998
Title: Tienyu Terry Sheng: Innovator in Plasma Doping Technology
Introduction
Tienyu Terry Sheng is a notable inventor based in San Jose, California. He has made significant contributions to the field of ion implantation technology, particularly in improving dose uniformity during plasma doping processes. His innovative approach has the potential to enhance the efficiency and effectiveness of semiconductor manufacturing.
Latest Patents
Tienyu Terry Sheng holds a patent for an "Apparatus for obtaining dose uniformity in plasma doping (PLAD) ion." This invention describes a method for improving dose uniformity in the PLAsma Doping (PLAD) ion implantation of a target material. The apparatus provides means for simultaneously biasing both the electrode, upon which the target is disposed, and a separately biasable concentric structure introduced about the electrode. This design allows for adjustable bias variation, enabling the effective adjustment of the implantation plasma shape, which is crucial for achieving a uniform dose distribution during PLAD ion implantation processes. He has 1 patent to his name.
Career Highlights
Tienyu Terry Sheng is currently employed at Varian Associates, Inc., where he continues to develop innovative solutions in the field of ion implantation. His work has been instrumental in advancing the technology used in semiconductor manufacturing, contributing to the overall efficiency of the industry.
Collaborations
Throughout his career, Tienyu has collaborated with notable colleagues, including David L. Chapek and Susan Benjamin Felch. These collaborations have fostered an environment of innovation and have led to significant advancements in their respective fields.
Conclusion
Tienyu Terry Sheng is a prominent figure in the realm of plasma doping technology, with a focus on enhancing dose uniformity in ion implantation processes. His contributions and innovative spirit continue to shape the future of semiconductor manufacturing.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
