Saratoga, CA, United States of America

Tien L Lin

This inventor holds 3 USPTO granted patents. Top assignee: Integrated Memory Technologies, Inc.. Active years: 2000-2001.


% Patents Active = 100.0

Average Co-Inventor Count = 1.2

ph-index = 2

Forward Citations = 59(Granted Patents)


Company Filing History:


Years Active: 2000-2001

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3 patents (USPTO):Explore Patents

Title: Tien L Lin: Innovator in Flash Memory Technology

Introduction

Tien L Lin is a notable inventor based in Saratoga, California, recognized for his contributions to the field of flash memory technology. With a total of three patents to his name, Lin has made significant advancements that enhance the efficiency and performance of memory devices.

Latest Patents

Among his latest patents is a method and apparatus for reducing high current chip erase in flash memories. This innovation addresses the challenges associated with high current during the chip erase process, ultimately improving the reliability and longevity of flash memory devices. Another significant patent is for a novel flash memory array, which features an array of memory cells designed with floating gate memory transistors. This design includes a unique arrangement of rows and columns, with a word line connecting the memory cells in the same row. The configuration allows for efficient programming and addressing, enhancing the overall functionality of the memory array.

Career Highlights

Tien L Lin is currently employed at Integrated Memory Technologies, Inc., where he continues to develop cutting-edge solutions in memory technology. His work has been instrumental in advancing the capabilities of flash memory, making it more efficient and reliable for various applications.

Collaborations

Lin collaborates with fellow innovator Ben Y Sheen, contributing to the development of new technologies in the field of memory systems.

Conclusion

Tien L Lin's innovative work in flash memory technology has positioned him as a key figure in the industry. His patents reflect a commitment to improving memory performance and reliability, making significant contributions to the field.

Profile summary based on public USPTO records.
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