This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2006.
Company Filing History:
Years Active: 2006
Title: Tien-J Bao: Innovator in Semiconductor Technology
Introduction
Tien-J Bao is a renowned inventor based in Hsin-Chu, Taiwan, specializing in the field of semiconductor technology. With a strong focus on innovation, he has made significant contributions to the development of methods that enhance the efficiency of integrated circuit manufacturing.
Latest Patents
Tien-J Bao holds a noteworthy patent titled "Method for forming openings in low-k dielectric layers." This patent outlines a novel approach to etching contact and via openings in low-k dielectric materials. The method introduces a carbon deficient ARL that is compatible with acidic photoresists used in DUV photolithography. The innovation allows for the utilization of fluorocarbon plasma etching ambients, reducing excessive polymer formation during the etching of deep, high aspect ratio contacts and vias in sub-tenth micron integrated circuit technology. This groundbreaking technique eliminates the need for an additional hardmask, streamlining the process of forming vertical walled openings in semiconductor devices.
Career Highlights
Tien-J Bao's career has been marked by his dedication to advancing semiconductor technology. He is employed at Taiwan Semiconductor Manufacturing Company Ltd., one of the leading firms in the semiconductor industry. His patent not only reflects his innovative spirit but also underscores the relevance of his work in the fast-evolving field of integrated circuits.
Collaborations
Throughout his career, Tien-J Bao has collaborated with esteemed colleagues, including Lih-Ping Li and Syun-Ming Jang. Their collective expertise contributes to the progression of cutting-edge technologies that drive the semiconductor industry forward.
Conclusion
In summary, Tien-J Bao exemplifies the innovative spirit that is essential in the realm of semiconductor technology. His patented methods for forming openings in low-k dielectric layers mark a significant advancement, showcasing the importance of collaboration and creativity in the pursuit of technological excellence. With continued contributions from inventors like Bao, the future of integrated circuits looks promising.