Shanghai, China

Tianle Guo

This inventor holds 1 USPTO granted patent. Top assignee: Chinese Academy of Sciences. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tianle Guo. Retrieved from https://idiyas.com/inventor/tianle-guo-ocn2wol5

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 8.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Innovations of Tianle Guo in Quantum Dot Technology

Introduction

Tianle Guo is an accomplished inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor nanomaterials, particularly through his innovative methods for modifying quantum dots.

Latest Patents

One of Tianle Guo's notable patents is titled "Method for in-situ modification of mercury quantum dots in traditional thermal injection process." This patent focuses on a method that enhances the synthesis of HgTe quantum dots. The process involves the rapid injection of a low boiling point polar solvent that is incompatible with the reaction solvent, leading to an interfacial separation of two liquid phases. This technique allows for selective crystal-oriented surface modification on the surfaces of mercury quantum dots.

Career Highlights

Tianle Guo is affiliated with the Chinese Academy of Sciences, where he conducts research and development in the field of nanotechnology. His work has garnered attention for its potential applications in various technological advancements.

Collaborations

Tianle Guo has collaborated with notable colleagues, including Jingjing Liu and Jianlu Wang, contributing to the advancement of research in quantum dot technology.

Conclusion

Tianle Guo's innovative methods in the preparation of compound semiconductor nanomaterials highlight his expertise and dedication to advancing technology in this field. His contributions are paving the way for future developments in quantum dot applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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