This inventor holds 1 USPTO granted patent. Top assignee: Xidian University. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: The Innovations of Tian Miao
Introduction
Tian Miao is a notable inventor based in Xi'an, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of CMOS structures. His work focuses on enhancing the performance and reliability of integrated circuits.
Latest Patents
Tian Miao holds 1 patent for his innovative CMOS structure and fabrication methods of FinFET CMOS, FD CMOS, and GAA CMOS. This patent outlines a CMOS structure that includes both nMOS and pMOS components. The nMOS features a first channel region and a first gate electrode formed on a semiconductor substrate, while the pMOS includes a second channel region and a second gate electrode. Notably, both channel regions are made from semiconductor materials with the same conductivity type, and the gate electrodes are formed from conductive materials with the same work function. This design reduces the processing steps required for fabricating CMOS, thereby simplifying the process and lowering production costs.
Career Highlights
Tian Miao is affiliated with Xidian University, where he continues to advance research in semiconductor technologies. His work has been instrumental in improving the efficiency of CMOS fabrication methods.
Collaborations
Tian has collaborated with esteemed colleagues such as Huiyong Hu and Liming Wang, contributing to various research projects and innovations in the field.
Conclusion
Tian Miao's contributions to semiconductor technology, particularly through his patented CMOS structure, highlight his role as an influential inventor in the industry. His work not only simplifies fabrication processes but also enhances the overall performance of integrated circuits.