This inventor holds 1 USPTO granted patent. Top assignee: China Resources Microelectronics (Chongqing) Co., Ltd.. Active years: 2025.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2025
Title: The Innovations of Tian Liao
Introduction
Tian Liao is a notable inventor based in Chongqing, China. He has made significant contributions to the field of semiconductor technology. His work primarily focuses on the development of advanced electronic devices.
Latest Patents
Tian Liao holds a patent for a super junction MOSFET device. This innovative device includes a substrate with a first conductive type, a buffer layer of the same type, and a super junction structure. The structure features multiple first and second conductive type pillars arranged alternately. The design allows for different transverse dimensions for the first conductive type pillars, enhancing the device's performance. The body region, source structure, and gate structure are also integral components of this advanced technology.
Career Highlights
Tian Liao is currently employed at China Resources Microelectronics (Chongqing) Co., Ltd. His role involves research and development in semiconductor devices. He has demonstrated a strong commitment to innovation in his field.
Collaborations
Tian has collaborated with several talented individuals, including Rongyao Ma and Daili Wang. These partnerships have contributed to the advancement of their projects and innovations.
Conclusion
Tian Liao's contributions to semiconductor technology, particularly through his patent for the super junction MOSFET device, highlight his role as an influential inventor in the industry. His work continues to pave the way for future innovations in electronic devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile