The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2025
Filed:
Mar. 16, 2022
China Resources Microelectronics (Chongqing) Co., Ltd, ChongQing, CN;
Tian Liao, ChongQing, CN;
Rongyao Ma, ChongQing, CN;
Daili Wang, ChongQing, CN;
Pengcheng Zhang, ChongQing, CN;
Jing Leng, ChongQing, CN;
Zhongwang Liu, ChongQing, CN;
CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO., LTD., ChongQing, CN;
Abstract
A super junction MOSFET device, including: a substrate having a first conductive type; a buffer layer having the first conductive type and disposed on the substrate; a super junction structure disposed on the buffer layer and including multiple first conductive type pillars and multiple second conductive type pillars alternately arranged in a transverse direction, several second conductive type pillars being partially and/or wholly displaced to provide two or more different transverse dimensions for the first conductive type pillars; a body region having the second conductive type and disposed on a top of the second conductive type pillar; a source structure located within the body region and including a source region having the first conductive type and an ohmic contact region having the second conductive type which contacts with the source region; and a gate structure in contact with the first conductive type pillar and the source structure.