Company Filing History:

33 out of 14,705

Infineon Technologies Ag

patents

5 out of 52,711

Kabushiki Kaisha Toshiba

4. 3 out of 832,680

Other

patents

where one patent can have more than one assignee

Years Active: 2002-2022

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38 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 11495273 - Write circuit, non-volatile data storage, method for writing to a plurality of memory cells and method for operating a non-volatile data memory (2022-11-08),

2. 7737428 - Memory component with memory cells having changeable resistance and fabrication method therefor (2010-06-15),

3. 7715226 - Memory device including electrical circuit configured to provide reversible bias across the PMC memory cell to perform erase and write functions (2010-05-11),

4. 7561460 - Resistive memory arrangement (2009-07-14),

5. 7499349 - Memory with resistance memory cell and evaluation circuit (2009-03-03),

6. 7495945 - Non-volatile memory cell for storage of a data item in an integrated circuit (2009-02-24),

7. 7414257 - Switching device for configurable interconnect and method for preparing the same (2008-08-19),

8. 7372716 - Memory having CBRAM memory cells and method (2008-05-13),

9. 7355898 - Integrated circuit and method for reading from resistance memory cells (2008-04-08),

10. 7327603 - Memory device including electrical circuit configured to provide reversible bias across the PMC memory cell to perform erase and write functions (2008-02-05),

11. 7289350 - Electronic device with a memory cell (2007-10-30),

12. 7257013 - Method for writing data into a memory cell of a conductive bridging random access memory, memory circuit and CBRAM memory circuit (2007-08-14),

13. 7251152 - Memory circuit having memory cells which have a resistance memory element (2007-07-31),

14. 7215568 - Resistive memory arrangement (2007-05-08),

15. 7187602 - Reducing memory failures in integrated circuits (2007-03-06),

Title: The Innovative Mind of Thomas Roehr: Pioneering Non-Volatile Data Storage

Introduction:

Thomas Roehr, a brilliant inventor hailing from Aschheim, Germany, has left an indelible mark in the field of technology with his remarkable contributions to the realm of non-volatile data storage. With a staggering 38 patents to his name, Roehr's inventive genius has reshaped the landscape of memory technology.

Latest Patents:

1. Write circuit for non-volatile data memory: Roehr's groundbreaking invention revolutionizes the process of writing to a plurality of memory cells in a non-volatile data memory, enhancing efficiency and performance.

2. Memory component with memory cells having changeable resistance: His innovative memory component utilizes active solid electrolyte material to create memory cells with adjustable resistance, offering a versatile and dynamic storage solution.

Career Highlights:

Having worked with renowned companies such as Infineon Technologies AG and Toshiba, Roehr has honed his expertise and garnered invaluable experience in the tech industry. His creative vision and technical prowess have propelled him to the forefront of innovation, earning him recognition as a trailblazer in the field of memory technology.

Collaborations:

Roehr's collaborative spirit and commitment to excellence are exemplified through his partnerships with esteemed colleagues such as Joerg W Wohlfahrt and Michael Jacob. Together, they have synergized their talents to foster cutting-edge advancements in the field, setting new benchmarks for technological innovation.

Conclusion:

In conclusion, Thomas Roehr stands as a testament to the power of ingenuity and perseverance in driving forward progress and innovation. His inventive spirit and dedication to pushing the boundaries of technology have undoubtedly left an indelible imprint on the world of non-volatile data storage, shaping the future of memory solutions for generations to come.

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