The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2007
Filed:
Apr. 05, 2005
Thomas Roehr, Aschheim, DE;
Thomas Roehr, Aschheim, DE;
Infineon Technologies AG, Munich, DE;
Abstract
The present invention relates to an electronic device comprising a memory cell with a resistive storage element having a first terminal and a second terminal. The resistive storage element can be switched between a first storage state with a first conductivity and a second storage state with a second conductivity. An access switch is coupled to the first terminal of the resistive storage element and to a node for connecting the first terminal of the resistive storage element to the node in an access state of the memory cell and for insulating the first terminal of the resistive storage element from the node in an idle state of the memory cell. A protecting switch is connected to the resistive storage element. The protecting switch, in the idle state of the memory cell, reduces the voltage across the resistive storage element produced by electromagnetic interference and, in the access state of the memory cell, enables the reading and the writing of the storage states of the resistive storage element. The electronic device may further comprise a control circuit operatively coupled to the access switch and to the protective switch which is configured to control the function of the access switch and the protecting switch in the access state and in the idle state of the memory cell.