Iserlohn, Germany

Thomas Oetzel

This inventor holds 1 USPTO granted patent. Top assignee: X-Fab Semiconductor Foundries Ag. Active years: 2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Thomas Oetzel. Retrieved from https://idiyas.com/inventor/thomas-oetzel

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: Thomas Oetzel: Pioneering Innovator in Silicon Technology

Introduction:

Thomas Oetzel, a passionate inventor hailing from Iserlohn, DE, is a true pioneer in the realm of technology. With a fervent dedication to innovation, he strives to create a better future through his groundbreaking inventions.

Latest Patents:

Oetzel holds 1 patent for the creation of dielectrically insulating silicon-technological trenches comprising rounded edges for allowing higher voltages. This innovation aims to integrate low-voltage logic elements and high-voltage power elements in a single silicon circuit, achieved through the use of isolation trenches with different potentials.

Career Highlights:

Currently employed at X-FAB Semiconductor Foundries AG, Oetzel continues to push the boundaries of silicon technology. His expertise lies in merging disparate elements within silicon circuits to enhance functionality and performance.

Collaborations:

Collaborating closely with colleagues Ralf Lerner and Uwe Eckoldt, Oetzel fosters a culture of innovation and collaboration at X-FAB Semiconductor Foundries AG. Together, they strive to create cutting-edge solutions that address the evolving needs of the tech industry.

Conclusion:

Thomas Oetzel's unwavering commitment to innovation and his relentless pursuit of technological advancement have solidified his position as a pioneering inventor in the field of silicon technology. His groundbreaking work continues to inspire and shape the future of the industry, setting a high standard for aspiring innovators worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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