Thomas N Hamilton

Title: Thomas N. Hamilton: Innovator in Crystal Film Technology

Introduction

Thomas N. Hamilton is a notable inventor based in Fullerton, CA (US). He has made significant contributions to the field of materials science, particularly in the development of methods for producing single crystal films. With a total of 2 patents, Hamilton's work has implications for various technological applications.

Latest Patents

Hamilton's latest patents include a "Method for producing single crystal films" and a "Method of forming a composite structure." The first patent describes a process where the reaction zone for the deposition of a metal oxide film on a crystal substrate is systematically controlled during a chemical vapor deposition process. This innovation allows for enhanced film characteristics. The second patent outlines a composite structure consisting of multiple layer structures, where a chemically vapor deposited film on a substrate wafer is utilized. This film is designed to create single wall magnetic domains that can be manipulated within the film's thickness and plane. The devices adapted to this film enable the sensing of these domains, making them suitable for memory or logic applications.

Career Highlights

Hamilton is associated with Rockwell International Corporation, where he has contributed to various projects and innovations. His work has been instrumental in advancing the understanding and application of crystal film technologies.

Collaborations

Some of Hamilton's notable coworkers include Jack E. Mee and David M. Heinz. Their collaborative efforts have further enriched the research and development environment at Rockwell International Corporation.

Conclusion

Thomas N. Hamilton's contributions to the field of crystal film technology highlight his innovative spirit and dedication to advancing materials science. His patents reflect a commitment to enhancing technological applications through novel methods and structures.