Rockwell International Corporation

Thomas N Hamilton

David M Heinz

Jack E Mee

John L Archer

George R Pulliam

Paul J Besser

The reaction zone for the deposition of a metal oxide film on a crystal substrate inside a reaction chamber is shifted during a chemical vapor deposition process by the systematic control of the process parameters of the system.

Method for producing single crystal films

A composite consisting of multiple layer structures, the basic structure of which is a chemically vapor deposited film on a substrate wafer is, disclosed herein. The film is of material which is appropriate for creating therein single wall magnetic domains which are capable of being moved about in predetermined directions within the thickness of the film and in the plane of the film. Devices are adapted to the film for sensing the motion of these domains, thereby enabling application of these structures to circuits which may be particularly utilized in memory or logic applications. A complete family of film on substrate materials is fabricated through a unique process. One of the steps of the process relates to the establishment within a reactor of the exact location of the substrate upon which deposition of the film is to be made. This is done in order to obtain desired film characteristics. Included are provisions for making multiple film layers as a matrix of films and hence a multitude of such circuits. Films used are comprised of at least three and four elements.

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Fullerton, CA, United States of America

Thomas N Hamilton