Thomas J Hayes

Title: Innovations of Thomas J Hayes

Introduction

Thomas J Hayes is a notable inventor based in Hillsborough, NJ (US). He has made significant contributions to the field of electrical engineering, particularly in the area of current sensing technologies. With a total of 3 patents to his name, Hayes has demonstrated a commitment to advancing innovation in his field.

Latest Patents

Hayes' latest patents focus on current sensing with RDS correction. In one embodiment, a method is disclosed that involves measuring the approximate temperature of a MOS transistor switch using a temperature sensor. This yields a measured temperature, which is then used to calculate a corrected temperature through a stored temperature sensor gain and offset correction function. The method also includes measuring the gate drive voltage for the MOS transistor and calculating a voltage correction factor based on the corrected temperature and the gate drive voltage. Additionally, it involves measuring the RDS voltage drop across the MOS transistor switch to yield a measured RDS voltage drop, ultimately allowing for the calculation of current using the measured RDS drop and the voltage correction factor.

Career Highlights

Throughout his career, Thomas J Hayes has worked with prominent companies in the electronics industry, including Intersil Americas Inc. and Renesas Electronics America Inc. His experience in these organizations has contributed to his expertise and innovative capabilities in the field.

Collaborations

Hayes has collaborated with notable professionals such as Robert H Isham and Andrew Lawrence Webb. These collaborations have likely enriched his work and contributed to the development of his patents.

Conclusion

Thomas J Hayes is a distinguished inventor whose work in current sensing technologies has made a significant impact in the field of electrical engineering. His patents reflect a deep understanding of MOS transistor technology and its applications.