Intersil Americas Inc.

Renesas Electronics America Inc.

Thomas J Hayes

Robert H Isham

Andrew Lawrence Webb

Julio Reyes

Donald R Preslar

Current sensing with RDScorrection is disclosed. In an embodiment, a method comprises: measuring an approximate temperature of a MOS transistor switch by a temperature sensor to yield a measured temperature; calculating a corrected temperature from the measured temperature using a stored temperature sensor gain and offset correction function; measuring a gate drive voltage for the MOS transistor; calculating a voltage correction factor using a stored voltage correction function, wherein the stored voltage correction function is a function of the corrected temperature and the gate drive voltage; measuring a RDSvoltage drop across the MOS transistor switch to yield a measured RDSvoltage drop; and calculating the current using the measured RDSdrop and the voltage correction factor.

[object Object]

A controller for regulating a FET to operate as a pass device including input, output and gate nodes coupled to a current path input, a current path output and the gate of the FET, respectively, a controlled low current device, and an oscillating high gain regulation amplifier. The voltage source provides a regulation voltage level relative to the input node. The low current device is coupled to the gate node and has a control input. The amplifier has a first input coupled to the output node, a second input coupled to the voltage source, and an output coupled to the control input of the controlled low current device to regulate the FET. The amplifier oscillates while regulating a voltage between the input and output nodes to the regulation voltage level. The controlled low current device presents a high impedance to the gate node to prevent oscillations from disturbing regulation.

Growing community of inventors

Hillsborough, NJ, United States of America

Thomas J Hayes