Company Filing History:
Years Active: 2007-2010
Title: Innovations by Thomas E. Shatz
Introduction
Thomas E. Shatz is an accomplished inventor based in Morgan Hill, CA (US). He holds a total of 4 patents that showcase his expertise in the field of magnetoresistive sensors. His work has significantly contributed to advancements in sensor technology.
Latest Patents
One of his latest patents is for a TMR sensor having an under-layer treated with nitrogen for increased magnetoresistance. This invention involves a tunnel junction TMR magnetoresistive sensor formed on layers that have nitrogen interspersed within them. The nitrogenation of the layers allows for very smooth and uniform surfaces, greatly improving sensor performance by providing a consistent barrier layer thickness. Another notable patent is for a GMR sensor having a capping layer treated with nitrogen for increased magnetoresistance. This magnetoresistive sensor features a Ta cap layer with nitrogen added in situ during deposition. The nitrogen in the cap layer is formed by depositing a Ta cap layer in a sputter deposition chamber with a small amount of nitrogen in an Ar atmosphere. The resulting nitrogenated cap layer exhibits reduced specular scattering, leading to improved magnetic performance of the magnetoresistive sensor.
Career Highlights
Thomas E. Shatz is currently employed at Hitachi Global Storage Technologies Netherlands B.V. His work at this company has allowed him to focus on innovative sensor technologies that enhance performance and reliability.
Collaborations
Some of his notable coworkers include Dulip Ajantha Welipitiya and Brian Rodrick York. Their collaboration has contributed to the development of advanced technologies in the field of magnetoresistive sensors.
Conclusion
Thomas E. Shatz is a prominent inventor whose work in magnetoresistive sensors has led to significant advancements in the field. His innovative patents reflect his dedication to improving sensor technology and performance.