The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2009
Filed:
Jun. 27, 2007
Wen-yaung Lee, San Jose, CA (US);
Thomas E. Shatz, Morgan Hill, CA (US);
Dulip Ajantha Welipitiya, Morgan Hill, CA (US);
Brian R. York, San Jose, CA (US);
Wen-yaung Lee, San Jose, CA (US);
Thomas E. Shatz, Morgan Hill, CA (US);
Dulip Ajantha Welipitiya, Morgan Hill, CA (US);
Brian R. York, San Jose, CA (US);
Hitachi Global Storage Technologies Netherlands B.V., Amsterdam, NL;
Abstract
A magnetoresistive sensor having a Ta cap layer with nitrogen added in situ during deposition. The nitrogen in the cap layer can be formed by depositing a Ta cap layer in a sputter deposition chamber having a small amount of nitrogen in an Ar atmosphere. The resulting nitrogenated cap layer exhibits reduced specular scattering, which results in improved magnetic performance of the magnetoresistive sensor.