The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2010
Filed:
May. 23, 2008
Applicants:
Thomas E. Shatz, Morgan Hill, CA (US);
Dulip Ajantha Welipitiya, Morgan Hill, CA (US);
Brian R. York, San Jose, CA (US);
Inventors:
Thomas E. Shatz, Morgan Hill, CA (US);
Dulip Ajantha Welipitiya, Morgan Hill, CA (US);
Brian R. York, San Jose, CA (US);
Assignee:
Hitachi Global Storage Technologies Netherlands B.V., Amsterdam, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/39 (2006.01);
U.S. Cl.
CPC ...
Abstract
A tunnel junction TMR magnetoresistive sensor formed on layers having nitrogen interspersed therein. The nitrogenation of the layers on which the sensor is deposited allows the sensor layers to have very smooth, uniform surfaces. This greatly improves sensor performance by, for example, providing a very uniform barrier layer thickness.