Tucson, AZ, United States of America

Thomas E Kuehl

This inventor holds 2 USPTO granted patents. Top assignee: Texas Instruments Corporation. Active years: 2007-2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Thomas E Kuehl. Retrieved from https://idiyas.com/inventor/thomas-e-kuehl

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2007-2008

Loading Chart...
2 patents (USPTO):Explore Patents

Title: Thomas E. Kuehl: Inventor in Resistor Integration

Introduction

Thomas E. Kuehl is an inventor associated with Tucson, Arizona, and Texas Instruments Corporation. His listed patent work includes a technique for reducing contact noise in thin-film resistors. He is credited with 2 patents.

Latest Patents

Kuehl’s listed patent, “Resistor Integration Structure and Technique for Noise Elimination,” describes a method for preventing contact noise in a silicon chromium (SiCr) thin-film resistor. The process deposits a SiCr layer and then a titanium tungsten (TiW) layer on a substrate without breaking the vacuum between depositions, helping prevent a discontinuous oxide from forming between the layers. The layers are patterned to create the resistor and its contacts, and a metallization layer contacts the TiW.

Career Highlights

The patent reflects work on integrating resistor materials and contacts to address noise in electronic components. Kuehl is associated with Texas Instruments Corporation, a company whose work includes semiconductor and electronics technologies.

Collaborations

Kuehl’s listed coworkers include H. Jerome Barber and Rajneesh Jaiswal. The available information identifies these professional associations but does not specify the details of their collaboration.

Conclusion

Thomas E. Kuehl’s patent work highlights a practical approach to reducing contact noise through careful deposition and integration of thin-film resistor materials.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…