The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2007
Filed:
Mar. 04, 2005
Rajneesh Jaiswal, Tucson, AZ (US);
H. Jerome Barber, Tucson, AZ (US);
Thomas E. Kuehl, Tucson, AZ (US);
Rajneesh Jaiswal, Tucson, AZ (US);
H. Jerome Barber, Tucson, AZ (US);
Thomas E. Kuehl, Tucson, AZ (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method of preventing contact noise in a SiCr thin film resistor includes performing in situ depositions of a SiCr layer and then a TiW layer on a substrate without breaking a vacuum between the depositions, to prevent formation of any discontinuous oxide between the SiCr layer and the TiW layer. The SiCr and TiW layers are patterned to form a predetermined SiCr thin film resistor pattern and a TiW resistor contact pattern on the SiCr thin film resistor, and a metallization layer is provided to contact the TiW forming the resistor contact pattern.