Tucson, AZ, United States of America

H Jerome Barber

This inventor holds 2 USPTO granted patents. Top assignee: Texas Instruments Corporation. Active years: 2007-2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: H Jerome Barber. Retrieved from https://idiyas.com/inventor/h-jerome-barber

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2007-2008

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2 patents (USPTO):Explore Patents

Title: H. Jerome Barber: Inventor of a Low-Noise Resistor Integration Technique.

Introduction

H. Jerome Barber is an inventor associated with Tucson, Arizona, and Texas Instruments Incorporated. His patent work includes a technique for reducing contact noise in silicon chromium (SiCr) thin-film resistors. He is credited with 2 patents.

Latest Patents

Barber’s listed latest patent is “Resistor Integration Structure and Technique for Noise Elimination.” The invention addresses contact noise in SiCr thin-film resistors by depositing a SiCr layer and then a titanium tungsten (TiW) layer in situ, without breaking the vacuum between depositions. This process helps prevent a discontinuous oxide from forming between the layers.

The layers are patterned to create the SiCr resistor and its TiW contacts. A metallization layer then contacts the TiW, completing the resistor’s electrical connection. The supplied patent information describes this same invention twice.

Career Highlights

Barber’s documented patent contribution focuses on resistor integration and noise reduction. The described process combines controlled layer deposition, patterning, and metallization to address a specific source of noise at resistor contacts.

Collaborations

The supplied information lists Rajneesh Jaiswal and Thomas E. Kuehl as Barber’s coworkers. Their names are associated with his professional context, though the provided details do not specify their roles in the patent.

Conclusion

H. Jerome Barber’s patent work highlights a practical semiconductor fabrication technique designed to reduce contact noise in SiCr thin-film resistors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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