Thomas A Pogemiller

Title: Thomas A. Pogemiller: Innovator in Memory Retention Technology

Introduction

Thomas A. Pogemiller is a notable inventor based in Burnsville, MN (US). He has made significant contributions to the field of semiconductor technology, particularly in memory retention characterization.

Latest Patents

Pogemiller holds a patent for the "MNOS FET memory retention characterization test circuit." This invention describes a method and sense latch circuit designed to determine the memory retention characteristics of differentially sensed metal nitride oxide semiconductor field effect transistor (MNOS FET) memory cells and arrays. The method involves substituting one differential comparator input with a known reference voltage (VR) to ascertain the analog voltage threshold levels of the memory cells. The sense latch circuit can be fabricated as an integrated circuit and is responsively coupled to control inputs, allowing it to operate in either a read or memory retention interrogation mode. This innovation enables the determination of the analog threshold levels of each cell in an array at specific times, facilitating the assessment of the array's memory window.

Career Highlights

Pogemiller has had a distinguished career, working at Sperry Rand Corporation, where he has applied his expertise in semiconductor technology. His work has contributed to advancements in memory retention and characterization methods.

Collaborations

One of his notable collaborators is Merton A. Horne, with whom he has worked on various projects related to semiconductor technology.

Conclusion

Thomas A. Pogemiller's contributions to the field of memory retention technology highlight his innovative spirit and dedication to advancing semiconductor research. His patent reflects a significant step forward in understanding memory characteristics in modern technology.