Theodore D Kennedy

Title: The Innovations of Theodore D. Kennedy

Introduction

Theodore D. Kennedy is a notable inventor based in Derry, NH (US), recognized for his contributions to the field of materials science and engineering. With a total of four patents to his name, Kennedy has made significant advancements in the epitaxial growth of aluminum and Group III-nitride structures.

Latest Patents

Kennedy's latest patents include innovative methods for the epitaxial growth of aluminum on aluminum-nitride compounds. This apparatus and associated methods focus on forming an epitaxial layer of aluminum by maintaining the temperature of a crystalline aluminum-nitride compound below a cluster-favoring temperature threshold within a vacuum chamber. The process involves exposing the crystalline aluminum-nitride compound to atoms of elemental aluminum for a predetermined duration, resulting in a layer of epitaxial aluminum with lower resistivity than poly-crystalline aluminum. Another significant patent involves a Group III-nitride structure that features successively reduced crystallographic dislocation density regions. This structure includes a nucleation layer and a plurality of pairs of stacked Group III-nitride layers, each designed to optimize growth characteristics and reduce surface roughness.

Career Highlights

Kennedy is currently employed at Raytheon Company, where he applies his expertise in materials science to develop cutting-edge technologies. His work has contributed to advancements in various applications, particularly in the defense and aerospace sectors.

Collaborations

Throughout his career, Kennedy has collaborated with esteemed colleagues such as William E. Hoke and Brian D. Schultz. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Theodore D. Kennedy's contributions to the field of materials science through his patents and work at Raytheon Company highlight his role as a significant inventor. His innovative approaches to epitaxial growth and Group III-nitride structures continue to influence advancements in technology.