The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2002
Filed:
May. 24, 2000
William E. Hoke, Wayland, MA (US);
Peter J. Lemonias, North Andover, MA (US);
Theodore D. Kennedy, Londonderry, NH (US);
Raytheon Company, Lexington, MA (US);
Abstract
A semiconductor structure, e.g., a high electron mobility transistor structure, is formed by using metamorphic growth and strain compensation. The structure includes a substrate, a graded layer over the substrate, a first donor/barrier layer over the graded layer, and a channel layer over the first donor/barrier layer. The substrate has a substrate lattice constant, and the graded layer has a graded lattice constant. The graded layer has a first lattice constant near a bottom of the graded layer substantially equal to the substrate lattice constant and a second lattice constant near a top of the graded layer different than the first lattice constant. The first donor/barrier layer has a third lattice constant, and the channel layer has a fourth lattice constant. The second lattice constant is intermediate the third and fourth lattice constants.