Tokyo, Japan

Tetsuya Takayashiki

This inventor holds 1 USPTO granted patent. Top assignees: Nippon Telegraph and Telephone Public Corporation, Oki Electric Industry Co., Ltd.. Active years: 1983.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tetsuya Takayashiki. Retrieved from https://idiyas.com/inventor/tetsuya-takayashiki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 17(Granted Patents)


Company Filing History:


Years Active: 1983

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1 patent (USPTO):Explore Patents

Title: Tetsuya Takayashiki: Innovator in Semiconductor Technology

Introduction

Tetsuya Takayashiki is a prominent inventor based in Tokyo, Japan. He is known for his significant contributions to the field of semiconductor technology. With a focus on manufacturing methods for integrated circuit devices, Takayashiki has made a notable impact in the industry.

Latest Patents

Takayashiki holds a patent for a method of manufacturing semiconductor integrated circuit devices. This innovative process involves forming spaced recesses in a low impurity concentration P type single-crystal substrate using a mask. A P type impurity is diffused at a high concentration into the substrate's surface, including the recesses, to create a P type diffused layer. An N type layer is then epitaxially grown on this P type diffused layer. The method continues with the formation of mask layers on the bottom surfaces of the recesses in the N type layer, which is subsequently anisotropically etched to form island regions. After removing the mask layers, N type diffused layers are created to cover these island regions. An insulating film, acting to isolate completed transistor elements, is formed on the P and N type diffused layers. Finally, a polycrystalline silicon layer is established on the insulating film, and the rear surface of the single-crystal silicon substrate is ground off to expose the insulating film. This process allows for the formation of MOS or bipolar type transistor elements in the island regions, resulting in a dielectrically isolated semiconductor integrated device.

Career Highlights

Throughout his career, Takayashiki has worked with notable companies, including Nippon Telegraph and Telephone Public Corporation and Oki Electric Industry Co., Ltd. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Takayashiki has collaborated with esteemed colleagues such as Tetsuma Sakurai and Taiji Usui. These partnerships have further enriched his work and advancements in the field.

Conclusion

Tetsuya Takayashiki's contributions to semiconductor technology through his innovative patent and career achievements highlight his role as a key inventor in the industry. His work continues to influence the development of integrated circuit devices, showcasing the importance of innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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