Yokohama, Japan

Tetsuro Endoh


Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 1995

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1 patent (USPTO):Explore Patents

Title: Uncovering the Innovations of Inventor Tetsuro Endoh

Introduction: Tetsuro Endoh, a prolific inventor hailing from Yokohama, Japan, has made significant contributions in the field of semiconductor technology. With a notable patent under his belt, Endoh has displayed a knack for developing cutting-edge solutions in the realm of memory cell technologies.

Latest Patents: Endoh's groundbreaking patent, titled "Process for forming arrayed field effect transistors highly integrated," outlines a sophisticated method for creating an array of FATMOS transistors that function as memory cells in a NAND cell type EEPROM. The process involves intricate layering and etching techniques to produce a multitude of insulated gate electrodes above the substrate, ultimately enhancing the performance and density of memory devices.

Career Highlights: Endoh has been a key figure at Kabushiki Kaisha Toshiba, a renowned electronics company known for its innovative semiconductor products. His expertise in semiconductor manufacturing has played a pivotal role in driving technological advancements within the industry, solidifying his reputation as a visionary inventor.

Collaborations: Throughout his career, Endoh has collaborated closely with esteemed coworkers such as Riichiro Shirota and Masaki Momodomi. Together, they have synergized their skills and knowledge to push the boundaries of semiconductor research, fostering a culture of innovation and excellence within their professional endeavors.

Conclusion: Tetsuro Endoh's inventive spirit and technical acumen have undoubtedly left an indelible mark on the landscape of semiconductor technology. His pioneering work in memory cell design continues to inspire further advancements in the field, underscoring his status as a trailblazing inventor in the world of innovation.

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