This inventor holds 1 USPTO granted patent. Top assignee: The United States of America as Represented by the United States. Active years: 1991.
Company Filing History:
Years Active: 1991
Title: The Innovative Contributions of Terry R Gullinger
Introduction
Terry R Gullinger is a notable inventor based in Albuquerque, NM (US). She has made significant contributions to the field of semiconductor technology. Her innovative work focuses on the formation of multiple levels of porous silicon for buried insulators.
Latest Patents
Gullinger holds a patent for a method of forming a multiple level porous silicon substrate for semiconductor integrated circuits. This patent involves anodizing non-porous silicon layers of a multi-layer silicon substrate to create multiple levels of porous silicon. At least one porous silicon layer is oxidized to form an insulating layer, while another layer beneath it is metallized to create a buried conductive layer. The insulating and conductive layers are separated by an anodization barrier made of non-porous silicon. This innovative approach allows for the fabrication of a fully or partially insulated buried conductor under single crystal silicon.
Career Highlights
Gullinger's career is marked by her dedication to advancing semiconductor technology. She has worked with various organizations, contributing her expertise to enhance the efficiency and functionality of integrated circuits. Her work has been recognized for its potential impact on the industry.
Collaborations
Throughout her career, Gullinger has collaborated with esteemed colleagues, including Robert S Blewer and Michael J Kelly. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.
Conclusion
Terry R Gullinger's contributions to semiconductor technology through her innovative patent demonstrate her commitment to advancing the field. Her work continues to influence the development of integrated circuits, showcasing the importance of innovation in technology.