Tengzhi Yang

Title: Tengzhi Yang: Innovator in Magnetoresistive Memory Technology

Introduction

Tengzhi Yang is a prominent inventor based in Beijing, China. He has made significant contributions to the field of magnetoresistive random access memory (MRAM). With a total of 2 patents, his work focuses on advancing memory technology through innovative methods and designs.

Latest Patents

Yang's latest patents include a magnetoresistive random access memory and a method for manufacturing the same. This invention features a stress layer that covers part of the protective layer along the direction of the current in the spin-orbit coupling layer. The stress generated on the magnetic layer creates a lateral asymmetric structure, enabling deterministic switching of the magnetic moment. Another notable patent is for a spin-orbit torque magnetoresistive random access memory, which includes a spin-orbit coupling layer and a magnetoresistive tunnel junction. This design incorporates a unique ion implantation process to generate defects in the magnetoresistive tunnel junction, enhancing its performance.

Career Highlights

Tengzhi Yang is affiliated with the Chinese Academy of Sciences, where he conducts his research and development. His work has positioned him as a key figure in the advancement of memory technologies, particularly in the realm of spintronics.

Collaborations

Yang has collaborated with notable colleagues, including Meiyin Yang and Jun Luo. Their combined expertise contributes to the innovative research being conducted at the Chinese Academy of Sciences.

Conclusion

Tengzhi Yang's contributions to magnetoresistive memory technology highlight his role as an influential inventor in the field. His patents reflect a commitment to advancing memory technology, paving the way for future innovations.