The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2020
Filed:
May. 14, 2019
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Abstract
A spin-orbit torque magnetoresistive random access memory, and a method for manufacturing a spin-orbit torque magnetoresistive random access memory are provided. The spin-orbit torque magnetoresistive random access memory includes a spin-orbit coupling layer and a magnetoresistive tunnel junction located on the spin-orbit coupling layer. The magnetoresistive tunnel junction includes a first magnetic layer, a tunneling layer, and a second magnetic layer that are sequentially stacked from bottom to top, and each of the first magnetic layer and the second magnetic layer has perpendicular anisotropy. In a direction of a current in the spin-orbit coupling layer, defects are generated in a part of the magnetoresistive tunnel junction by an ion implantation process.