Teng-Wang Huang

Title: The Innovative Contributions of Teng-Wang Huang

Introduction

Teng-Wang Huang is a notable inventor based in Taipei Hsien, Taiwan. He has made significant contributions to the field of technology, particularly in the area of substrate fabrication and etching methods. With a total of 3 patents to his name, Huang's work has had a considerable impact on the industry.

Latest Patents

Huang's latest patents include a "Method for fabricating a deep trench in a substrate." This invention provides a method for forming a deep trench in a substrate by using a sacrificial layer and a liner layer to define the deep trench pattern. The sacrificial layer is then replaced with a silicon glass layer, and a thick mask layer, which includes the silicon glass layer, the liner layer, and a silicon nitride layer, is formed on the substrate. Through an opening in the thick mask layer, a deep trench is etched into the substrate. Another significant patent is the "Method of etching silicon anisotropically," which utilizes a solution containing NHF and HF for the anisotropic etching of silicon.

Career Highlights

Throughout his career, Teng-Wang Huang has worked with prominent companies such as Nan Ya Technology Corporation and Infineon Technologies AG. His experience in these organizations has allowed him to refine his skills and contribute to various innovative projects.

Collaborations

Huang has collaborated with several talented individuals in his field, including Chung-Yen Chou and Hai-Han Hung. These collaborations have further enhanced his work and led to advancements in technology.

Conclusion

Teng-Wang Huang's contributions to the field of technology through his patents and collaborations highlight his innovative spirit and dedication to advancing substrate fabrication and etching methods. His work continues to influence the industry and inspire future inventors.