The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2010
Filed:
Feb. 22, 2008
Chung-yen Chou, Taipei County, TW;
Hai-han Hung, Taoyuan County, TW;
Teng-wang Huang, Taipei Hsien, TW;
Shin-yu Nieh, Taipei, TW;
Chung-Yen Chou, Taipei County, TW;
Hai-Han Hung, Taoyuan County, TW;
Teng-Wang Huang, Taipei Hsien, TW;
Shin-Yu Nieh, Taipei, TW;
Nanya Technology Corp., Kueishan, Tao-Yuan Hsien, TW;
Abstract
The invention provides a method for forming a deep trench in a substrate. A sacrificial layer and a liner layer are first used to define the deep trench pattern. The sacrificial layer is then replaced with a silicon glass layer. A thick mask layer includes the silicon glass layer, the liner layer and a silicon nitride layer is formed on the substrate. Through an opening of the thick mask layer, a deep trench is etched into the substrate.