This inventor holds 1 USPTO granted patent. Top assignee: Chartered Semiconductor Manufacturing Ltd (Corporation). Active years: 2007.
Company Filing History:
Years Active: 2007
Title: Innovations by Teck Wee Lim in Semiconductor Technology
Introduction
Teck Wee Lim is a notable inventor based in Singapore, recognized for his contributions to semiconductor technology. His innovative work focuses on methods that enhance the performance and reliability of semiconductor devices.
Latest Patents
Teck Wee Lim holds a patent titled "Methods for elimination of arsenic based defects in semiconductor devices with isolation regions." This patent outlines methods for preparing conductive regions, such as source/drain regions, for silicidation procedures. The techniques involve the removal of native oxide and arsenic-based defects from conductive surfaces before the deposition of metal components in metal silicide regions. The invention also addresses the issue of arsenic ions implanted for N-type source/drain regions, which can migrate into insulator regions. The pre-silicidation preparation treatments described in this patent effectively eliminate both native oxide and arsenic-based defects, ensuring improved semiconductor performance.
Career Highlights
Teck Wee Lim is associated with Chartered Semiconductor Manufacturing Ltd, a corporation known for its advancements in semiconductor manufacturing. His work has significantly contributed to the field, particularly in enhancing the quality of semiconductor devices.
Collaborations
Teck Wee Lim has collaborated with notable coworkers, including Yin-Min Felicia Goh and Simon Yew-Meng Chooi, who have also made significant contributions to the semiconductor industry.
Conclusion
Teck Wee Lim's innovative methods for eliminating arsenic-based defects in semiconductor devices represent a significant advancement in semiconductor technology. His contributions continue to influence the industry positively.