Tazsheng Feng

Title: Tazsheng Feng: Innovator in Wafer Scale Memory Technology

Introduction

Tazsheng Feng is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of memory technology, particularly in the area of wafer scale memories. His innovative approach addresses critical challenges in memory module design and performance.

Latest Patents

Tazsheng Feng holds a patent titled "Placement and routing for wafer scale memory." This invention presents an architecture for wafer scale memories and a placement method that replaces defective chips with spare chips in a memory module. The goal is to provide minimum critical signal delay. The patent details a classification of SDRAM memory chips into normal and spare chips, with normal chips organized into groups such as rows or columns. The spare chips are utilized to replace defective normal chips. A delay model for metal lines and vias is employed to compute the signal delay for placement and routing. The placement problem is modeled as a bipartite graph and solved using a branch and bound algorithm to achieve a chip replacement configuration that minimizes critical signal delay. Additionally, a hierarchical routing approach is described, which classifies signals into different types and levels. The replacement of defective chips with spare chips is facilitated by using two extra conductive layers, patterned with a mask that is independent of the defect distribution of a specific wafer.

Career Highlights

Tazsheng Feng is currently associated with United Microelectronics Corporation, where he continues to advance his research and development efforts in memory technology. His work has garnered attention for its innovative solutions to complex engineering problems.

Collaborations

Throughout his career, Tazsheng has collaborated with esteemed colleagues, including Min-Chih John Hsuan and Charlie Han. These collaborations have contributed to the advancement of technology in the semiconductor industry.

Conclusion

Tazsheng Feng's contributions to wafer scale memory technology exemplify the impact of innovative thinking in engineering. His patent reflects a commitment to enhancing memory module performance and reliability. His work continues to influence the field and inspire future advancements in memory technology.