Tatsuya Tonogi

Title: Tatsuya Tonogi: Innovator in Silicon Device Structures

Introduction

Tatsuya Tonogi is a notable inventor based in Tsuchiura, Japan. He has made significant contributions to the field of silicon device structures, holding a total of 5 patents. His work focuses on advancements in semiconductor technology, particularly in the fabrication of silicon devices.

Latest Patents

Among his latest patents is a silicon device structure that includes a P-doped n-type amorphous silicon film formed on a silicon semiconductor. This innovative structure features wiring made of a silicon oxide film and a copper alloy film. The copper alloy contains manganese and phosphorus, which are critical for enhancing the device's performance. Another notable patent involves a wiring structure that incorporates a silicon layer, a backing layer of copper alloy, and a diffusion barrier layer with electrical conductivity. This design improves the interface between the silicon layer and the backing layer, optimizing the overall functionality of the device.

Career Highlights

Tatsuya Tonogi has worked with prominent companies such as Hitachi Cable, Inc. and Hitachi Powdered Metals Co., Ltd. His experience in these organizations has allowed him to develop and refine his expertise in semiconductor technologies.

Collaborations

Throughout his career, Tonogi has collaborated with esteemed colleagues, including Noriyuki Tatsumi and Masahiro Seido. These partnerships have contributed to his innovative work and the successful development of his patents.

Conclusion

Tatsuya Tonogi is a distinguished inventor whose contributions to silicon device structures have advanced the field of semiconductor technology. His patents reflect a commitment to innovation and excellence in engineering.