Hitachi Cable, Inc.

Hitachi Powdered Metals Co., Ltd.

Tatsuya Tonogi

Noriyuki Tatsumi

Masahiro Seido

Kazuhiko Nakagawa

Minoru Shirahige

Masahiro Okahara

Tsutomu Yamanaka

There is provided a silicon device structure, comprising: a P-doped ntype amorphous silicon film formed on a silicon semiconductor, and a wiring formed on the P doped n+ type amorphous silicon film, wherein the wiring is formed of a silicon oxide film which is formed on a surface of the P doped ntype amorphous silicon film and is also formed of a copper alloy film, and the copper alloy film is a film obtained by forming a copper alloy containing Mn of 1 atom % or more and 5 atom % or less and P of 0.05 atom % or more and 1.0 atom % or less by sputtering.

Silicon device structure, and sputtering target used for forming the same

A wiring structure has a silicon layer, a backing layer provided on the silicon layer, the backing layer comprising a copper alloy containing a nickel, and a copper layer provided on the backing layer, and a diffusion barrier layer having an electrical conductivity, the diffusion barrier layer being provided at a region including an interface between the silicon layer and the backing layer, in which a nickel in the diffusion barrier layer is enriched compared with the backing layer.

Wiring structure and method for fabricating the same

A wiring structure has a silicon layer, a backing layer provided on the silicon layer, the backing layer comprising a copper alloy containing a manganese, and a copper layer provided on the backing layer, and a diffusion barrier layer having an electrical conductivity, the diffusion barrier layer being provided at a region including an interface between the silicon layer and the backing layer, in which a manganese in the diffusion barrier layer is enriched compared with the backing layer.

A corrosive resistant metal material covered with a conductive substance suitable for use in a component material requiring conductivity and corrosion resistance like electrical conductive material, electrical contact, electromagnetic wave shield, electrochemical electrode or antistatic material, specifically for component material requiring conductivity in sever condition of corrosive environment is provided. A corrosive resistant metal material covered with a conductive substance is formed by cladding a corrosive resistant metal selected from the group consisting of titanium, zirconium, tantalum, niobium and alloy thereof on a conductive metal selected from the group consisting of iron, aluminum, copper, titanium, magnesium, zirconium, tantalum, niobium, tungsten, nickel, chrome and alloy thereof, and covering a conductive surface finishing layer over surface of a corrosive resistant metal layer with a mixture of conductive substance and resinous binder.

Corrosive resistant metal material covered with conductive substance

The surface of highly conductive iron, copper, aluminum, magnesium, or alloy thereof is covered with highly corrosion-resistant titanium or titanium alloy through plastic working by rolling or extrusion to form a cladding material. At least one surface of the cladding material is covered with a carbon material to form a separator for a solid polymer electrolyte fuel cell. By virtue of the above constitution, the separator for a solid polymer electrolyte fuel cell has good workability and, at the same time, can surely maintain or improve electrical conductivity and corrosion resistance.

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Tsuchiura, Japan

Tatsuya Tonogi