The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2013
Filed:
Jul. 06, 2011
Applicants:
Noriyuki Tatsumi, Kasumigaura, JP;
Tatsuya Tonogi, Tsuchiura, JP;
Inventors:
Noriyuki Tatsumi, Kasumigaura, JP;
Tatsuya Tonogi, Tsuchiura, JP;
Assignee:
Hitachi Cable Ltd, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract
There is provided a silicon device structure, comprising: a P-doped ntype amorphous silicon film formed on a silicon semiconductor, and a wiring formed on the P doped n+ type amorphous silicon film, wherein the wiring is formed of a silicon oxide film which is formed on a surface of the P doped ntype amorphous silicon film and is also formed of a copper alloy film, and the copper alloy film is a film obtained by forming a copper alloy containing Mn of 1 atom % or more and 5 atom % or less and P of 0.05 atom % or more and 1.0 atom % or less by sputtering.