Sagamihara, Japan

Tatsuya Teshima


Average Co-Inventor Count = 5.0

ph-index = 4

Forward Citations = 93(Granted Patents)


Location History:

  • Sagamihara, JP (2000 - 2001)
  • Kanagawa, JP (2000 - 2006)

Company Filing History:


Years Active: 2000-2006

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6 patents (USPTO):Explore Patents

Title: Tatsuya Teshima: Innovator in Semiconductor Technology

Introduction

Tatsuya Teshima is a prominent inventor based in Sagamihara, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on improving the efficiency and functionality of memory devices and transistors.

Latest Patents

One of Teshima's latest patents is a controllable conduction device with an electrostatic barrier. This invention features a transistor design that includes source and drain regions, a conduction path for charge carriers, and a gate for controlling the flow of these carriers. The device employs a multiple layer structure that creates a multiple tunnel junction configuration, effectively blocking current leakage when the transistor is in its off state. Additionally, he has developed a method for fabricating a memory device that boasts a long data retention time while suppressing leakage current. This innovative approach involves a conductive film arranged on the rim of an isolation insulating film, allowing for independent control of electrical pn junction locations.

Career Highlights

Tatsuya Teshima is currently employed at Hitachi, Ltd., where he continues to advance semiconductor technology. His work has been instrumental in developing devices that enhance data retention and reduce leakage, which are critical for modern memory applications.

Collaborations

Throughout his career, Teshima has collaborated with notable colleagues, including Ken Yamaguchi and Hiroshi Mizuta. These partnerships have contributed to the successful development of his innovative technologies.

Conclusion

Tatsuya Teshima is a key figure in the semiconductor industry, known for his groundbreaking inventions that improve the performance of memory devices and transistors. His contributions continue to shape the future of technology.

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