Tokyo, Japan

Tatsuya Sodekoda

This inventor holds 1 USPTO granted patent. Top assignee: Ihi Corporation. Active years: 2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tatsuya Sodekoda. Retrieved from https://idiyas.com/inventor/tatsuya-sodekoda

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: Tatsuya Sodekoda: Innovator in Ion Implanting Technology

Introduction

Tatsuya Sodekoda is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of ion implantation technology. His innovative work has led to the development of a unique ion implanting apparatus.

Latest Patents

Tatsuya Sodekoda holds a patent for an ion implanting apparatus. This apparatus includes a separation slit that receives an ion beam having passed through a mass-separation electromagnet. It allows a desired type of ion to selectively pass through. The separation slit is operable to vary the shape of a gap through which the ion beam passes. Additionally, the apparatus includes a variable slit disposed between an extraction electrode system and the mass-separation electromagnet. This variable slit forms a gap through which the ion beam passes and is operable to vary the shape of the gap to shield a part of the ion beam extracted from the ion source.

Career Highlights

Tatsuya Sodekoda is associated with IHI Corporation, where he has been able to apply his expertise in ion implantation technology. His work has been instrumental in advancing the capabilities of ion implanting systems.

Collaborations

Throughout his career, Tatsuya has collaborated with notable colleagues, including Ichiro Nakamoto and Masahiro Yoshida. These collaborations have further enriched his contributions to the field.

Conclusion

Tatsuya Sodekoda is a key figure in the development of ion implanting technology, with a patent that showcases his innovative approach. His work continues to influence advancements in this critical area of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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