Tatsuya Ooguro

Title: Tatsuya Ooguro: Innovator in Semiconductor Technology

Introduction

Tatsuya Ooguro is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of MOSFET devices. With a total of 2 patents to his name, Ooguro's work has had a notable impact on the industry.

Latest Patents

Ooguro's latest patents focus on a MOS type semiconductor device featuring a gate length of 170 nm (0.17 µm) or less. The junction depth of the source and drain diffusion layers in the vicinity of the channel is 22 nm or less. Additionally, the concentration of impurities at the surface in the source and drain diffusion layers is set to 10²⁰ cm^-3 or more. This innovative structure is achieved through solid phase diffusion using heat ranging from 950°C to 1050°C, along with the narrowing of gate width by ashing or etching. Furthermore, the relationship between the junction depth in the source and drain diffusion layer regions and the effective channel length is defined by the equation L_eff > 0.69 x_j - 6.17.

Career Highlights

Ooguro is currently employed at Kabushiki Kaisha Toshiba, where he continues to advance semiconductor technology. His work has been instrumental in enhancing the performance and efficiency of MOSFET devices.

Collaborations

Some of Ooguro's notable coworkers include Takashi Yoshitomi and Yukihiro Ushiku. Their collaborative efforts contribute to the innovative environment at Toshiba.

Conclusion

Tatsuya Ooguro is a key figure in the semiconductor industry, with a focus on developing advanced MOSFET technologies. His contributions through patents and collaboration with esteemed colleagues highlight his commitment to innovation in this critical field.