Tatsuya Asaka

This inventor holds 16 USPTO granted patents, primarily in Semiconductor Laser Technology. Top assignees: Seiko Epson Corporation, Seiko Epson Corporaition. Active years: 1992-1997.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tatsuya Asaka. Retrieved from https://idiyas.com/inventor/tatsuya-asaka

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 16

% Patents Active = 100.0

Average Co-Inventor Count = 2.6

ph-index = 9

Forward Citations = 205(Granted Patents)

Location History:

Nagano, JP (1994)
Suwa, JP (1992 - 1997)

Company Filing History:

15 out of 34,305

Seiko Epson Corporation

patents

1 out of 23

Seiko Epson Corporaition

patents

Years Active: 1992-1997

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Areas of Expertise:

Surface Emitting Laser

Semiconductor Laser

Plasma Etching

Thin Film Semiconductors

Anisotropic Etching

Manufacturing Process

Emission Type Laser

Laser Manufacturing

16 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 5625637 - Surface emitting semiconductor laser and its manufacturing process (1997-04-29),

2. 5621750 - Surface emission type semiconductor laser, method and apparatus for (1997-04-15),

3. 5587335 - Method of making surface emission type semiconductor laser (1996-12-24),

4. 5537666 - Surface emission type semiconductor laser (1996-07-16),

5. 5436922 - Surface emission type semiconductor laser (1995-07-25),

6. 5404369 - Surface emission type semiconductor laser (1995-04-04),

7. 5375133 - Surface emitting semiconductor laser and method of manufacture (1994-12-20),

8. 5356832 - Method of making surface emission type semiconductor laser (1994-10-18),

9. 5317584 - Surface emission type semiconductor laser (1994-05-31),

10. 5295148 - Surface emission type semiconductor laser (1994-03-15),

11. 5236537 - Plasma etching apparatus (1993-08-17),

12. 5182757 - Surface emission type semiconductor laser (1993-01-26),

13. 5181221 - Surface emission type semiconductor laser (1993-01-19),

14. 5181219 - Surface emission type semiconductor laser (1993-01-19),

15. 5145554 - Method of anisotropic dry etching of thin film semiconductors (1992-09-08),

Title: Tatsuya Asaka: Innovator in Semiconductor Laser Technology

Introduction

Tatsuya Asaka is a prominent inventor based in Suwa, Japan, known for his significant contributions to the field of semiconductor laser technology. With a total of 16 patents to his name, Asaka has made remarkable advancements that have influenced various applications in the industry.

Latest Patents

One of Asaka's latest patents is for a surface emitting semiconductor laser and its manufacturing process. This innovative design features a resonator cavity that is transverse to the planar extent of the deposited layers. It includes a first reflection mirror on the substrate side, composed of alternating layers of Group III-V compound semiconductors. The second reflection mirror is located at the opposite end of the cavity, adjacent to a column-like resonator portion. The first reflection mirror comprises a distributive Bragg reflection (DBR) multiple layer mirror, which enhances the current flow and reduces element resistance. The fabrication method for the DBR mirror and dual buried layer is simplified, allowing for effective doping concentration control without high-temperature processing.

Career Highlights

Throughout his career, Tatsuya Asaka has worked with notable companies, including Seiko Epson Corporation. His work has been instrumental in advancing semiconductor technologies, particularly in the development of efficient laser systems.

Collaborations

Asaka has collaborated with esteemed colleagues such as Katsumi Mori and Hideaki Iwano, contributing to the innovative projects that have defined his career.

Conclusion

Tatsuya Asaka's contributions to semiconductor laser technology have established him as a key figure in the field. His innovative patents and collaborations reflect his commitment to advancing technology and improving manufacturing processes.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]