The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 1993
Filed:
Apr. 18, 1991
Tatsuya Asaka, Suwa, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
A microwave ECR plasma etching apparatus having a plasma generating chamber coupled to a separate treatment chamber for supporting a Group II-VI sample to be dry etched, are tailored for the dry etching of Group II-VI compound semiconductors resulting in highly anisotropic etched patterns in Group II-VI materials having vertical side walls taking advantage of the ionicity of the constituents of Group II-VI compounds and utilizing a low ion energy level which will not damage the crystalline integrity of the Group II-VI material. A precleaning step is provided prior to dry etching of the Group II-VI sample thereby enhancing the etching rate of the dry etching treatment. In several embodiments, the microwave ECR plasma etching apparatus includes precleaning apparatus integral with the treatment chamber to preclean the Group II-VI sample surface prior to its transfer, without braking vacuum, to the treatment chamber.