Chiba, Japan

Tatsunori Isobe

This inventor holds 1 USPTO granted patent and 4 published patent applications. Top assignee: Ulvac, Inc.. Active years: 2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tatsunori Isobe. Retrieved from https://idiyas.com/inventor/tatsunori-isobe

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2012

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1 patent (USPTO):Explore Patents

Title: Innovations of Tatsunori Isobe in Magnetron Sputtering Technology.

Introduction

Tatsunori Isobe is a notable inventor based in Chiba, Japan. He has made significant contributions to the field of magnetron sputtering technology. His work focuses on enhancing the efficiency and effectiveness of thin film formation processes.

Latest Patents

Isobe holds a patent for a "Magnetron sputtering electrode, and sputtering apparatus provided with magnetron sputtering electrode." This invention addresses the uniform erosion of the peripheral portion of a target in a magnetron sputtering apparatus. It aims to achieve high efficiency in target utilization while minimizing abnormal discharging, thus enabling satisfactory thin film formation.

Career Highlights

Isobe is associated with Ulvac, Inc., a company known for its advanced vacuum technology and equipment. His innovative work in magnetron sputtering has positioned him as a key figure in the development of efficient thin film deposition techniques.

Collaborations

He has collaborated with notable coworkers such as Yasuhiko Akamatsu and Makoto Arai. Their combined expertise contributes to the advancement of technologies in their field.

Conclusion

Tatsunori Isobe's contributions to magnetron sputtering technology exemplify the importance of innovation in enhancing manufacturing processes. His patent reflects a commitment to improving efficiency and quality in thin film applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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